AG Associates Heatpulse Rapid Thermal Processor Model 610I , 4 Bank , AWD-1-13

Hot Sale AG Associates Heatpulse610I RTA RTP RTO RTN Rapid Thermal Annealing Only USD $62.300.00 Good condition and ready to use, come with 1 year warranty. The AG Associates Heatpulse 610I Rapid Thermal Processor (RTP) is a production-proven, manually loaded, single-wafer atmospheric thermal processing system. It uses a high-intensity lamp array to heat substrates in seconds for applications like ion implant activation, silicide formation, and contact alloying.

• Wafer / Substrate Capacity: Accommodates 2-inch, 3-inch, 4-inch, 5-inch, and 6-inch (150mm) wafers. It handles both Silicon and III-V compound materials.
• Temperature Range: Steady-state operating range of 400°C to 1250°C.
• Heating Rate: High-speed ramp rates variable from 1°C to 200°C per second.
• Cooling Rate: Temperature-dependent, with a maximum drop speed of 150°C per second.
• Process Duration: Typically programmed for 1 to 600 seconds (though software allows up to 9,999 seconds).
• Temperature Uniformity: ±5°C across a 150mm wafer at 1150°C. 

• Heating Chamber: Cold-wall design utilizing a semiconductor-grade quartz process chamber. 
• Lamp Array: Powered by 21 tungsten halogen lamps split into upper and lower arrays for balanced heating uniformity. 
• Dual Temperature Sensors:
  • Extended Range Pyrometer (ERP): Closed-loop control for high-temperature cycles (600°C – 1250°C).
  • Thermocouple: K-type physical sensor for lower temperature cycles (150°C – 840°C). 

• Gas Flow Control: Configured for atmospheric pressure processing with an initial nitrogen (N₂) or argon (Ar) purge. Up to 4 Mass Flow Controllers (MFCs) can be integrated to introduce process environments like O₂ or Forming Gas. 

• Ion Implant Activation
• Source/Drain Ohmic Contact Alloying
• Silicide Formation (e.g., Ti, Co, Ni)
• GaAs & III-V Material Processing
• Rapid Thermal Oxidation (RTO) and Nitridation