CHA Temescal E-Beam Evaporation System - Image 2

Semiconductor & PCB Manufacturing Equipment

CHA Temescal E-Beam Evaporation System

Condition : For parts or not working

$38,700.00

Description
Reviews

Hot Sale CHA Temescal E-Beam Evaporation System Only US$38.700.00, Good condition and ready to use, come with 1 year warranty. The CHA Temescal E-Beam Evaporation System is a high-quality piece of equipment used in semiconductor and PCB manufacturing. Developed by CHA Industries and Temescal, this system utilizes evaporation technology to deposit thin films onto semiconductor wafers and PCB boards with precision and accuracy.
It is an essential tool for businesses in the semiconductor and PCB manufacturing industry, providing reliable and efficient results for a variety of applications.

CHA Temescal E-Beam Evaporation System Specifications

Parameter	Specification Details
Power Supply	Temescal 10 kV high-voltage power supply (commonly CV-6SXL or CV-14)
E-Beam Gun Source	Temescal 4-pocket, 6-pocket, or 8-pocket turret sources (e.g., Series 260)
Vacuum System	High-capacity Cryogenic Pump backed by dry mechanical pumps
Chamber Vacuum Pressures	Ultimate base pressure of ~ 1 × 10⁻⁷ to 5 × 10⁻⁸ Torr; operating deposition vacuum at ≤ 2 × 10⁻⁶ Torr
Deposition Controller	Inficon IC/5 or XTC-3M programmable thin film controller with quartz crystal microbalance (QCM) monitoring
Automation System	CHA Auto-Tech II / PLC interfaces for automated valve sequencing, venting, and multi-layer recipe execution

Core Performance Features

Advanced Sweep Control: Features a Temescal e-beam sweep controller allowing joystick position adjustments and up-to-8 programmable beam-sweep patterns per pocket to ensure uniform crucible melting and prevent pocket burning.
High Uniformity Tooling: Utilizes a lift-off configuration plate, dome rotation, or full planetary motion. Coupled with custom internal baffling, it achieves roughly ≤ 5% uniformity across targeted substrate surfaces.
Rapid Cycle Load-Lock Options: Select configurations use a fast-cycle load-lock isolation chamber. The source metals stay under continuous high vacuum while the user loads or unloads substrates, cutting pump-down recycle times to under 15–20 minutes.
Broad Material Processing: Optimized for sequential multi-layer stack depositions without breaking vacuum. It handles metals (Al, Ti, Au, Pt, Ni, Cr, Ag, Pd, Cu) as well as dielectrics/oxides (SiO2, TiO2) via optional integrated oxygen gas mass flow controllers (MFC) to maintain layer stoichiometry.
Substrate Capacities: Highly adaptable tooling configurations accommodate sample bits, multiple 3-inch/4-inch wafers (ranging from 9 up to 18 wafers per run depending on lift-off or sidewall coverage setup), or large single wafers up to 5-inch/6-inch sizes