Hot Sale Ion implanter | Vacuum Chamber Only USD $10.600.00 Good Condition and Ready To Use, Come with 1 year warranty.
Stainless chamber with diffusion pumps, Previously an Ion implanter Specification :
| Chamber Zone | Operating Pressure Range | Base Pressure | Primary Gas Load / Source |
|---|---|---|---|
| Ion Source Chamber | 10⁻² to 10⁻³ mbar | ≤ 10⁻⁶ mbar | Process gases (BF₃, PH₃, AsH₃), outgassing |
| Beamline / Analyzer | 10⁻⁵ to 10⁻⁶ mbar | ≤ 10⁻⁷ mbar | Mass-separated ion cross-contamination, scattered ions |
| End Station / Target | 10⁻⁶ to 10⁻⁸ mbar | ≤ 10⁻⁹ mbar | Photoresist outgassing (during wafer impact), load-lock cycling |
Chamber Material & Mechanical Design
- Base Material: High-grade 304L or 316L Stainless Steel or Aluminium alloys (for lightweight applications). Surfaces are typically electro-polished to minimize internal outgassing rates.
- Internal Shielding: High-wear zones and beam dumps utilize refractory metals like Molybdenum, Tungsten, or TZM alloy to withstand high-energy ion bombardment without excessive sputtering contamination.
- Sealing Technology:
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- Static Seals: Fluorocarbon elastomers (Viton/Kalrez) for high-traffic zones; ConFlat (CF) metal copper gaskets for UHV areas.
- Rotary Seals: Advanced magnetic fluid (ferrofluidic) seals on the wafer manipulator/scanning platform to maintain high-speed physical rotation under vacuum without degradation.
Pumping System Architecture
To handle the corrosive, toxic, and high-volume gas loads, a typical system integrates the following layout:
- Primary / Roughing Pumps: Multi-stage dry roots or dry scroll pumps (preventing oil backstreaming contamination).
- High Vacuum Pumps:
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- Turbomolecular Pumps (TMP): Magnetic-levitation TMPs (≥ 1000 L/s) are preferred at the Ion Source and Beamline to pump light gases continuously.
- Cryopumps: Utilized predominantly at the End Station due to their high water-vapor pumping speed and capacity to trap massive photoresist outgassing instantly.
- Ultra-High Vacuum (UHV) Assist: Ion pumps and Titanium Sublimation Pumps (TSP) are frequently situated under the target chamber to hit pressures deeper than 10⁻⁸ mbar.
Sample Control & Electrical Specs
- Substrate Temperature Control: Range from -196°C (Liquid Nitrogen cooling) up to 800°C (Hot Implantation). Heating or water-cooling prevents wafer warping or resist burning during high-current implants.
- Electrostatic Chuck (ESC): Vacuum-compatible ESCs to hold wafers securely and provide back-side gas cooling (usually Helium) within a vacuum environment.
- High-Voltage Isolation: Isolation bushings and breaks capable of handling acceleration potentials from 2 keV to over 500 keV relative to the grounded chamber walls.
Standard Instrumentation & Safety
- Vacuum Gauges: Wide-range Pirani gauges for atmospheric-to-medium vacuum tracking; Inverted Magnetron (Cold Cathode) or Bayard-Alpert Ionization gauges for UHV monitoring.
- Gas Safety Interlocks: Pneumatic gate valves isolate the beamline and source during sudden pressure spikes, filament changes, or target load-lock operations.
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